Chemistry Reference
In-Depth Information
sample as shown in Fig. 7.62(3). Also, for uniform etching in fluoride-based solutions,
the potential has to be in the current plateau region of an anodic (see Fig.
5.1). Instead of applying an external current, anodic potential can be applied via gal-
vanic action by depositing a metal on a part of the silicon surface.
1181
Chemical etching of the silicon wafer in mixtures of HF and is used to
remove surface work damage and stress from the slicing operation as well as to provide
