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the fastest in KOH solution.
1001
For (110) and (100) planes, which one etches faster
depends on the formulation of the etchant as shown in Fig. 7.32. Crystal surfaces other
than {100}, {110}, or {111} can be considered to be composed microscopically of the
main crystal planes.
206
Figure 7.35
478,1019
shows the etch rates of silicon material of dif-
ferent crystal planes in 10 M KOH solution at 62 °C. It is interesting to note that the
etch rate of the (111) plane may not be the lowest in HF solutions as shown in
Table 7.1.
