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particular, etch rate reduction on highly boron doped polycrystalline material which
contains the highest level of defects is found to be significantly less than that on single-
crystalline substrate.
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Etch rate reduction is not observed for highly doped silicon in HF-based solu-
tions.
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It is observed on highly boron doped silicon for (100), (110), and (111) ori-
entations in all major alkaline etching solutions.
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Figure 7.31 shows the dependence
of etch rate on boron concentration in different alkaline solutions.
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For KOH solu-
tions, the decrease becomes less steep with increasing KOH concentration. In
the etch rate reduction is stronger than in KOH. A much larger etch rate reduction, as
high as 8000-fold, is observed.
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