Chemistry Reference
In-Depth Information
in TMAH,
518,1005
nitride and oxide in
in SCl solutions,
884
Al and
and
in
7.3. FLUORIDE SOLUTIONS
7.3.1. Absence of Oxidants
The etch rate of silicon in HF solutions at room temperature at the OCP is very
in concentrated solutions (>25% HF).
715
Dilution of con-
centrated HF results in an increased etch rate, which is attributed to the increased
concentration as shown in Fig. 7.2.
985
Figure 7.3 shows the effect of pH; the etch rate
increases from a pH of about 4, peaks at 6.5, and then decreases drastically to near zero
95
low, on the order of
at about 8.5.
The etch peak is attributed to the involvement of
as the etching
