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than but close to
both paths
and
are involved resulting in a dissolution valence
between 2 and 4.
Reaction path shown in Fig. 5.71 is responsible for the dissolution valence
and quantum efficiency of 4 observed on
n
-Si in HF solutions at low light intensities.
It results in a dissolution valence and quantum efficiency of 4. This reaction path, which
is a combination of reaction step (IV) in Fig. 5.69 and Eq. (5.29), is slow and is revealed
only at a low light intensity when the reaction is small. At high light intensities this
reaction path is still active but the dissolution valence and quantum efficiency is less
than 4 as reaction becomes dominant.
Figure 5.72 shows the reaction paths in KOH solutions. Path
which involves
no holes and electrons, is responsible for the chemical dissolution in KOH solutions at
OCP. A possible alternative of is as shown in Fig. 5.73. Path involves two
carriers and is responsible for the electrochemical part of the dissolution reaction at
