Chemistry Reference
In-Depth Information
5.10.2. Oscillation of Anodic Oxide Thickness and Properties
Various surface analytical techniques have been used to investigate the changes
in the physical and chemical properties of the oxide film during oscillation.
122,408,860,950
During the oscillation the thickness of the oxide film on the silicon surface varies peri-
odically, the frequency of which coincides with the associated current oscillation.
Figure 5.55, for example, shows the variation of oxide thickness, about 2 nm in ampli-
tude (or about 25% of the average thickness), during the photocurrent oscillation of
n
-
950
type silicon at
in a solution of 0.1 M [F] and pH 4.4.
The anodic current is
