Chemistry Reference
In-Depth Information
appears to have a similar dependence on doping concentration as does the pas-
sivation potential as shown in Fig. 5.42. It requires a relatively small overpotential to
produce passivation for highly doped silicon samples, which may be associated with
the relatively low etch rates of highly doped materials.
207,269,594
This aspect will be
further discussed in Chapter 7.
The dissolution rate of silicon in alkaline solutions at anodic potentials is
relatively high in the active region and is low in the passive region as shown in
