Chemistry Reference
In-Depth Information
ity.
648
On the (100) surface the recombination is 50% faster than on the (111) surface.
Also, the change in velocity with concentration is reversible on the time scale of
15 min, which is explained by Yablonovitch
et al
.
648
as due to the acid-base equilib-
rium associated with the interaction of the acids with a small density of defects still
present on the surface.
The surface recombination of silicon electrode in involves one
discrete recombination center as shown in Fig. 5.18 which can be described by Eq.
(1-40).
182
In and solutions, the surface recombination curve is
similar to that in Fig. 5.18.
61
The recombination is attributed to the surface states
