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the anodic oxides grown in ethylene glycol with a water content between 0.15 and
0.35% and proper cleaning and annealing, can be close to those for thermally grown
oxides. 228
Conductive anodic silicon oxide films can be produced by doping a submono-
609
layer of platinum in the oxide.
The platinum is deposited on the silicon surface gal-
vanostatically from 5%
silicon is then anodized in 0.2 M
for a thickness from 0.002 to 2.5 monolayers. The
under illumination followed by a heat treat-
ment. The Pt is present in the film at 0.25 (at
) to 0.03 /solution) atom %
and either as Pt or as PtO with an energy level close to the n -Si valence band edge.
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