Chemistry Reference
In-Depth Information
at a given voltage becomes much lower with increasing holding times, indicating that
the oxide structure changes with holding time. Also, the current measured on the oxide
films is higher at a cathodic potential than at an anodic potential, and it is different for
n-
and
p-
type silicon.
The
C-V
curves of the anodic oxide films formed in water and in
containing ethylene glycol electrolyte are identical to those of thermal oxides with little
shift and distortion.
228,457
The oxide films formed in aqueous solutions are found
to give distorted
C-V
curves.
244
The distortion is attributed to the slow traps at the
interface which are charged during the cathodic sweep and discharged during
the anodic sweep.
139
Annealing of the anodic oxides formed in
generates much
better
C-V
curves.
