Chemistry Reference
In-Depth Information
silicon cannot be anodized but pits form.
404
Anodization is possible in 0.1 N HCl
aqueous solution at relatively low voltages, up to 8 V.
98
The effect of on the for-
mation of silicon is similar to that on the passivation and oxide formation on many
metals. The presence of chloride ions in electrolytes causes breakdown of passive films
at low potentials and thus prevents the buildup of voltage required for formation of
thick oxide films. The oscillations in the curves shown in Fig. 3.6, indicating the insta-
bility or breakdown/regrowth cycles of the oxide, may be similar to those occurring
during anodization of silicon in HF solutions (see Section 5.10).
The amount of water present in an organic solvent is of particular importance in
the growth and properties of anodic oxides. Water as an oxidizing agent is essential in
