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Fig. 5. Modulation of the non-local resistance due to spin precession, as a function of
perpendicular magnetic field. The injection current was set at 300 ΜA. The red (parallel,
↑↑) and blue (anti-parallel, ↓↑) open circles are experimental data, and the red and blue
lines are the result of model fitting.
Fig. 6. (Left) A typical FET characteristics of a SLG spin FET at RT. Arrows indicate
the directions of the gate-voltage sweep. (Right) Gate-voltage dependence of the
corresponding spin voltages in the SLG spin FET. Arrows indicate the directions of the
gate-voltage sweep. The spin voltages were detected by using a non-local technique.
The signal is the minimum where the conductivity of the SLG is the minimum (the Dirac
point), which directly means that the contact is electrically transparent as we have
designed.
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