Chemistry Reference
In-Depth Information
CHAPTER 11
GATE-VOLTAGE MODULATION IN GRAPHENE
K. Tsukagoshi,
*
,†,¶
H. Miyazaki,
*
,†
S.-L. Li,
*
A. Kumatani,
*
H. Hiura,
*
,‡
and A. Kanda
†,§
*
MANA, NIMS, NAMIKI, TSUKUBA, IBARAKI 305-0047, JAPAN
†
CREST, JST, KAWAGUCHI, SAITAMA 332-0012, JAPAN
‡
NEC, TSUKUBA, IBARAKI 305-8501, JAPAN
§
UNIVERSITY OF TSUKUBA, TSUKUBA, IBARAKI 305-8571, JAPAN
¶
TSUKAGOSHI.KAZUHITO@NIMS.GO.JP
We present a review of our experiments on graphene transistors in its potential
use as atomic film switching devices. As the preparation of the bilayer
graphene, a quick formation method to precisely confirm the number of layers
is required. Fabrication of gate electrodes specialized for the graphene system
is also useful in the application of a high electric field in the graphene
transistor. In this short review paper, our original method of fabrication and
structure of gate electrodes for the graphene transistor will be introduced.
1.
INTRODUCTION
A thin graphite film with atomic scale thickness will be one of the key
materials for future electronics. Besides its high mobility [1,2], graphene
is conductive without doping, which eliminates its limitation in device
miniaturization due the uncertainty of dopant position [3]. Furthermore,
the atomic film is ideal to confine conduction carrier into a real two-
dimensional space. The ideal two-dimensional conductor can achieve
efficient switching of the conduction during gate voltage changes even
though transistor size is miniaturized to nano-scale [4]. However, the
intrinsic metallic nature and high carrier density of graphene prevents the
use of graphene channel in semiconductor switching devices. The
resistance tunability under a gate electric field is at most several tens,
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