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(a)
E 0
E F
n + -GaAs
AlGaAs
GaAs
AlGaAs
n + -GaAs
(b)
e V b
(c)
e V c
Position
(d)
B
C
A
Voltage
Figure 5.19 (a)-(c) The variation in the conduction band line-up with increasing
applied bias in a double barrier structure. (d) The current-voltage char-
acteristic for such a structure. The current is peaked about the point B
where resonant tunnelling is possible, and can show a strong negative
differential resistance as the bound state moves off-resonance in (c).
 
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