Chemistry Reference
In-Depth Information
(a)
Shubnikov
deHaas
n
s
=
n
1
+
n
2
9.0
n
1
n
1
8.0
1.0
n
2
0
(b)
9.0
Hall
∆
n
H
n
H
8.0
(c)
40
~13000
[cm
2
/V sec]
H
~
1
30
20
2
-600
-400 -200
Gate voltage
V
g
[V]
0
200
Figure 5.7
Variation in the low-temperature mobility with increasing carrier density
at a heterojunction interface. The mobility decreases markedly when the
carrier density increases to the point where carrier scattering becomes
possible between the first and second sub-band. The carrier density was
changed by varying the gate voltage across a field effect transistor structure
(from Stormer, © 1982 by Elsevier Science, reproduced by permission of
the publisher).
