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and at E H
V , respectively, where V is negative and is a measure of the
strength of the covalent interaction between the neighbouring orbitals. By
comparison with the LiH molecule in Chapter 2, the two lowest energy
levels in the H X molecule are given by
E X
2
E X
+
E H
E H
V 2
E
=
±
+
(4.24)
2
2
The variation in the energy levels of the H X molecule with the X atom
self-energy, E X , is plotted in fig. 4.7(a). On the upper left-hand side of the
(a)
) 2
E = E X + E H
2
(
E X - E H
2
+
+ V 2
E H +⏐ V
E x
E H
E H - V
(
) 2
E = E X + E H
2
E X - E H
2
-
+ V 2
(b)
E c
E g
E v
0
Electronegativity difference
Figure 4.7 (a) Variation in the energy levels of the H X molecule as the X atom
self-energy, E X , is varied with respect to the H atom value, E H . (b) In a semi-
conductor, the bonding and anti-bonding levels are broadened into bands.
For small electronegativity differences, defect-related resonant states are
found in the bands (dashed lines), which shift into the energy gap (solid
lines) as the electronegativity difference increases.
 
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